onsemi N-Channel MOSFET, 106 A, 650 V D2PAK-7L NTBG025N065SC1
- RS Stock No.:
- 254-7663P
- Mfr. Part No.:
- NTBG025N065SC1
- Brand:
- onsemi
Subtotal 1 unit (supplied on a continuous strip)*
£7.51
(exc. VAT)
£9.01
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 797 unit(s), ready to ship
Units | Per unit |
|---|---|
| 1 + | £7.51 |
*price indicative
- RS Stock No.:
- 254-7663P
- Mfr. Part No.:
- NTBG025N065SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 106 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | D2PAK-7L | |
| Mounting Type | Surface Mount | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 106 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type D2PAK-7L | ||
Mounting Type Surface Mount | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK−7L
The ON Semiconductor NTB series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Used in telecommunication
Ultra low gate charge
High speed switching and low capacitance
Ultra low gate charge
High speed switching and low capacitance