Vishay Dual N-Channel MOSFET, 100 A, 30 V, 12-Pin PowerPAIR 3 x 3FS SIZF5302DT-T1-RE3
- RS Stock No.:
- 252-0295P
- Mfr. Part No.:
- SIZF5302DT-T1-RE3
- Brand:
- Vishay
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£89.90
(exc. VAT)
£107.90
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 6,035 unit(s) shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
50 - 120 | £1.798 |
125 - 245 | £1.626 |
250 - 495 | £1.532 |
500 + | £1.436 |
*price indicative
- RS Stock No.:
- 252-0295P
- Mfr. Part No.:
- SIZF5302DT-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 100 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | PowerPAIR 3 x 3FS | |
Mounting Type | Surface Mount | |
Pin Count | 12 | |
Number of Elements per Chip | 2 | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerPAIR 3 x 3FS | ||
Mounting Type Surface Mount | ||
Pin Count 12 | ||
Number of Elements per Chip 2 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Symmetric dual N-channel
Flip chip technology optimal thermal design
High side and low side MOSFETs form optimized
Combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency
For high frequency swi
Symmetric dual N-channel
Flip chip technology optimal thermal design
High side and low side MOSFETs form optimized
Combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency
For high frequency swi