Vishay N-Channel MOSFET, 39.6 A, 200 V, 8-Pin PowerPAK SO-8DC SIDR610EP-T1-RE3

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Subtotal 20 units (supplied on a continuous strip)*

£67.80

(exc. VAT)

£81.40

(inc. VAT)

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20 - 48£3.39
50 - 98£3.07
100 - 198£2.885
200 +£2.705

*price indicative

Packaging Options:
RS Stock No.:
252-0262P
Mfr. Part No.:
SIDR610EP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

39.6 A

Maximum Drain Source Voltage

200 V

Package Type

PowerPAK SO-8DC

Mounting Type

Surface Mount

Pin Count

8

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen V power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested