Vishay N-Channel MOSFET, 153 A, 80 V, 8-Pin PowerPAK SO-8DC SIDR5802EP-T1-RE3
- RS Stock No.:
- 252-0260P
- Mfr. Part No.:
- SIDR5802EP-T1-RE3
- Brand:
- Vishay
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£117.60
(exc. VAT)
£141.10
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 4,625 unit(s), ready to ship
Units | Per unit |
---|---|
50 - 120 | £2.352 |
125 - 245 | £2.128 |
250 - 495 | £2.002 |
500 + | £1.878 |
*price indicative
- RS Stock No.:
- 252-0260P
- Mfr. Part No.:
- SIDR5802EP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 153 A | |
Maximum Drain Source Voltage | 80 V | |
Package Type | PowerPAK SO-8DC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 153 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PowerPAK SO-8DC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested