Infineon N-Channel MOSFET, 44 A, 600 V, 8-Pin HSOF-8 IPT60R055CFD7XTMA1
- RS Stock No.:
- 250-0595P
- Mfr. Part No.:
- IPT60R055CFD7XTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£37.90
(exc. VAT)
£45.50
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 27 February 2026
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Units | Per unit |
|---|---|
| 10 - 24 | £3.79 |
| 25 - 49 | £3.63 |
| 50 - 99 | £3.46 |
| 100 + | £3.23 |
*price indicative
- RS Stock No.:
- 250-0595P
- Mfr. Part No.:
- IPT60R055CFD7XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 44 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | HSOF-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 44 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type HSOF-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Number of Elements per Chip 1 | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase shift full-bridge (ZVS) and LLC resulting from reduced gate charge(Qg), best-in-class reverse recovery charge (Qrr) and improved turn off behaviour CoolMOS CFD7 offers highest efficiency in resonant topologies.
Best-in-class RDS(on) in SMD and THD packages
Excellent hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use / performance trade-off
Excellent hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use / performance trade-off
