Infineon N-Channel MOSFET, 35 A, 650 V, 3-Pin D2PAK IPB60R060C7ATMA1
- RS Stock No.:
- 250-0593P
- Mfr. Part No.:
- IPB60R060C7ATMA1
- Brand:
- Infineon
Subtotal 1 unit (supplied on a continuous strip)*
£5.64
(exc. VAT)
£6.77
(inc. VAT)
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In Stock
- 497 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 + | £5.64 |
*price indicative
- RS Stock No.:
- 250-0593P
- Mfr. Part No.:
- IPB60R060C7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 35 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 35 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
The Infineon CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon technologies. This series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on) A below 1Ohm*mm². It is suitable for hard and soft switching (PFC and high performance LLC). It has an increased MOSFET dv/dt ruggedness to 120V/ns and increased efficiency.
Enabling higher system efficiency by lower switching losses
Increased power density solutions due to smaller packages
Suitable for applications such as server, telecom and solar
Increased power density solutions due to smaller packages
Suitable for applications such as server, telecom and solar
