Infineon N-Channel MOSFET, 680 mA, 100 V, 3-Pin SOT-223 BSP316PH6327XTSA1
- RS Stock No.:
- 250-0536P
- Mfr. Part No.:
- BSP316PH6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£23.30
(exc. VAT)
£27.95
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,930 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 50 - 120 | £0.466 |
| 125 - 245 | £0.434 |
| 250 - 495 | £0.402 |
| 500 + | £0.376 |
*price indicative
- RS Stock No.:
- 250-0536P
- Mfr. Part No.:
- BSP316PH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 680 mA | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 680 mA | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
The Infineon makes this SIPMOS, Small-Signal-Transistor P-Channel, Enhancement mode mosfet. The device is dv/dt rated, P-channel, Enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free.
Vds is 100 V, RDS(on) 1.8 Ω and Id is 0.68 A
Maximum power dissipation is 360 mW
Maximum power dissipation is 360 mW
