Infineon N-Channel MOSFET, 18 A, 1200 V, 7-Pin D2PAK IMBG120R220M1HXTMA1
- RS Stock No.:
- 249-6954P
- Mfr. Part No.:
- IMBG120R220M1HXTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£42.90
(exc. VAT)
£51.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 155 unit(s) shipping from 27 October 2025
- Plus 999,999,844 unit(s) shipping from 23 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 24 | £4.29 |
| 25 - 49 | £4.11 |
| 50 - 99 | £3.92 |
| 100 + | £3.65 |
*price indicative
- RS Stock No.:
- 249-6954P
- Mfr. Part No.:
- IMBG120R220M1HXTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | TO-263-7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type TO-263-7 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Number of Elements per Chip 1 | ||
The Infineon silicon carbide MOSFET reduction of system complexity. It directly drive from fly-back controller. Efficiency improvement and cooling effort reduction. Enabling higher frequency.
Very low switching losses
Short circuit withstand time 3 μs
Fully controllable dV/dt
Benchmark gate threshold voltage, VGS(th) = 4.5V
Robust against parasitic turn on, 0V turn-off gate voltage can be applied
Robust body diode for hard commutation
XT interconnection technology for best-in-class thermal performance
Package creepage and clearance distance > 6.1mm
Sense pin for optimized switching performance
Short circuit withstand time 3 μs
Fully controllable dV/dt
Benchmark gate threshold voltage, VGS(th) = 4.5V
Robust against parasitic turn on, 0V turn-off gate voltage can be applied
Robust body diode for hard commutation
XT interconnection technology for best-in-class thermal performance
Package creepage and clearance distance > 6.1mm
Sense pin for optimized switching performance
