Infineon N-Channel MOSFET, 225 A, 1200 V, 3-Pin TO-247 IMW120R007M1HXKSA1
- RS Stock No.:
- 248-6665P
- Mfr. Part No.:
- IMW120R007M1HXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 2 units (supplied in a tube)*
£99.38
(exc. VAT)
£119.26
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 212 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 2 - 4 | £49.69 |
| 5 - 9 | £47.59 |
| 10 - 19 | £45.50 |
| 20 + | £43.93 |
*price indicative
- RS Stock No.:
- 248-6665P
- Mfr. Part No.:
- IMW120R007M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 225 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 225 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
The Infineon CoolSiC 1200 V, 7 mΩ SiC MOSFET in TO247-3 package build on a state of the art trench semiconductor process optimized to combine performance with reliability, these includes, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic and the CoolSiC MOSFETs are ideal for hard and resonant switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
VDSS - 1200 V at T - 25°C
IDCC - 225 A at T - 25°C
RDS(on) - 7 mohm at VGS - 18 V, T - 25°C
Very low switching losses
Benchmark gate threshold voltage, VGS(th) - 4.2 V
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
Robust body diode for hard commutation
XT interconnection technology for best-in-class thermal performance
IDCC - 225 A at T - 25°C
RDS(on) - 7 mohm at VGS - 18 V, T - 25°C
Very low switching losses
Benchmark gate threshold voltage, VGS(th) - 4.2 V
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
Robust body diode for hard commutation
XT interconnection technology for best-in-class thermal performance
