onsemi N-Channel MOSFET, 47 A, 650 V, 4-Pin TO-247-4L NTH4L060N065SC1
- RS Stock No.:
- 248-5816P
- Mfr. Part No.:
- NTH4L060N065SC1
- Brand:
- onsemi
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Subtotal 10 units (supplied in a tube)*
£67.80
(exc. VAT)
£81.40
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 442 unit(s), ready to ship
Units | Per unit |
|---|---|
| 10 + | £6.78 |
*price indicative
- RS Stock No.:
- 248-5816P
- Mfr. Part No.:
- NTH4L060N065SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 47 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247-4L | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 47 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247-4L | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L
The ON Semiconductor Silicon Carbide (SiC) MOSFET is a N channel MOSFET with 650 V drain to source voltage and 176 W power dissipation, TO247-4L packaging and this device is Halide free and RoHS compliant with exemption 7a, Pb−Free 2LI.
Ultra low gate charge 74 nC
Low capacitance 133 pF
100 percent avalanche tested
Temperature 175°C
RDS(on) 44 mohm
Low capacitance 133 pF
100 percent avalanche tested
Temperature 175°C
RDS(on) 44 mohm