P-Channel MOSFET Transistor, 12 A, 100 V, 3-Pin TO-220NIS Toshiba 2SJ380
- RS Stock No.:
- 247-8843
- Mfr. Part No.:
- 2SJ380
- Brand:
- Toshiba
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 247-8843
- Mfr. Part No.:
- 2SJ380
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220NIS | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 210 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 35 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V | |
| Width | 4.7mm | |
| Length | 10.3mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 8.1mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type P | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220NIS | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 210 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 35 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 48 nC @ 10 V | ||
Width 4.7mm | ||
Length 10.3mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 8.1mm | ||
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