Diodes Inc N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerDI3333-8 DMT32M4LFG-7
- RS Stock No.:
- 246-7548P
- Mfr. Part No.:
- DMT32M4LFG-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£18.50
(exc. VAT)
£22.00
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 1,985 unit(s), ready to ship
Units | Per unit |
---|---|
50 - 95 | £0.37 |
100 - 245 | £0.31 |
250 - 995 | £0.306 |
1000 + | £0.298 |
*price indicative
- RS Stock No.:
- 246-7548P
- Mfr. Part No.:
- DMT32M4LFG-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 100 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | PowerDI3333-8 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 0.028 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3V | |
Select all | ||
---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerDI3333-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.028 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in powerDI3333-8 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. It has an excellent Qgd xRDS(ON) product (FOM) and advanced technology for DC-DC conversion.
Maximum drain to source voltage is 30 V and maximum gate to source voltage is ±20 V It provides small form factor thermally and efficient package enables higher density end products It occupies just 33% of the board area occupied by SO-8 enabling smaller end product