Diodes Inc N-Channel MOSFET, 101 A, 100 V, 3-Pin TO-220AB DMT10H9M9LCT
- RS Stock No.:
- 246-7545P
- Mfr. Part No.:
- DMT10H9M9LCT
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£10.94
(exc. VAT)
£13.13
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 125 unit(s) ready to ship
- Plus 999,999,870 unit(s) shipping from 14 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
10 - 20 | £1.094 |
25 - 95 | £1.074 |
100 - 495 | £0.866 |
500 + | £0.842 |
*price indicative
- RS Stock No.:
- 246-7545P
- Mfr. Part No.:
- DMT10H9M9LCT
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 101 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.014 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.5V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 101 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.014 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Number of Elements per Chip 1 | ||
The DiodesZetex makes a new generation N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain fast switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in TO220AB packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 100 V and Maximum gate to source voltage is ±20 V It offers low on-resistance It has high BVDSS rating for power application It offers low input capacitance