Diodes Inc Dual N-Channel MOSFET, 9 A, 20 V, 6-Pin U-DFN2030 DMN2014LHAB-13

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Subtotal 25 units (supplied on a continuous strip)*

£3.375

(exc. VAT)

£4.05

(inc. VAT)

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Packaging Options:
RS Stock No.:
246-7508P
Mfr. Part No.:
DMN2014LHAB-13
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

20 V

Package Type

U-DFN2030

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

0.028 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Number of Elements per Chip

2

The DiodesZetex makes a new generation dual N-channel enhancement mode MOSFET, it has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN2030-6 packaging. It offers fast switching and high efficiency. It has working temperature range of -55°C to +150°C. It offers low input capacitance and fast switching speed.

Maximum drain to source voltage is 20 V and maximum gate to source voltage is ±16 V It offers low on-resistance and low gate threshold voltage ESD protected gate