Infineon CoolSiC N-Channel MOSFET, 52 A, 1200 V, 3-Pin TO-247 AIMW120R045M1XKSA1
- RS Stock No.:
- 244-2909
- Mfr. Part No.:
- AIMW120R045M1XKSA1
- Brand:
- Infineon
Subtotal (1 tube of 240 units)*
£2,624.16
(exc. VAT)
£3,149.04
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 480 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 240 + | £10.934 | £2,624.16 |
*price indicative
- RS Stock No.:
- 244-2909
- Mfr. Part No.:
- AIMW120R045M1XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 52 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Series | CoolSiC | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 52 A | ||
Maximum Drain Source Voltage 1200 V | ||
Series CoolSiC | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
The Infineon AIMW120R045M1XKSA1 is specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality and performance. The increase of switching frequency for a converter using CoolSiC™ MOSFETs can result in dramatically reduced volume and weight of the magnetic components by up to 25%, which yields to significant cost increase of the application itself. The gain in performance fulfills new regulation standards in terms of higher efficiency requirements for electric vehicles.
Revolutionary semiconductor material - Silicon Carbide Very low switching losses
Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on)
0V turn-off gate voltage
Benchmark gate threshold voltage, VGS(th)=4.5V
Fully controllable dv/dt
Commutation robust body diode, ready for synchronous rectification Temperature independent turn-off switching losses
Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on)
0V turn-off gate voltage
Benchmark gate threshold voltage, VGS(th)=4.5V
Fully controllable dv/dt
Commutation robust body diode, ready for synchronous rectification Temperature independent turn-off switching losses
