Nexperia MOSFET, 47.2 A, 650 V TO-247 GAN041-650WSBQ
- RS Stock No.:
- 243-4619
- Mfr. Part No.:
- GAN041-650WSBQ
- Brand:
- Nexperia
Subtotal (1 tube of 30 units)*
£438.33
(exc. VAT)
£525.99
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 30 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | £14.611 | £438.33 |
*price indicative
- RS Stock No.:
- 243-4619
- Mfr. Part No.:
- GAN041-650WSBQ
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Maximum Continuous Drain Current | 47.2 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Maximum Continuous Drain Current 47.2 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
The Nexperia Gallium Nitride (GaN) FET in a TO-247 package is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies offering superior reliability and performance.
Ultra-low reverse recovery charge
Simple gate drive (0 V to +10 V or 12 V)
Robust gate oxide (±20 V capability)
High gate threshold voltage (+4 V) for very good gate bounce immunity
Very low source-drain voltage in reverse conduction mode
Transient over-voltage capability
Simple gate drive (0 V to +10 V or 12 V)
Robust gate oxide (±20 V capability)
High gate threshold voltage (+4 V) for very good gate bounce immunity
Very low source-drain voltage in reverse conduction mode
Transient over-voltage capability
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