Infineon N-Channel MOSFET, 31 A, 600 V, 3-Pin D2PAK IPB60R070CFD7ATMA1
- RS Stock No.:
- 242-5830
- Mfr. Part No.:
- IPB60R070CFD7ATMA1
- Brand:
- Infineon
Subtotal (1 unit)*
£3.24
(exc. VAT)
£3.89
(inc. VAT)
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In Stock
- 970 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 + | £3.24 |
*price indicative
- RS Stock No.:
- 242-5830
- Mfr. Part No.:
- IPB60R070CFD7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 31 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon Super junction MOSFET in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and EOSS
Excellent hard commutation ruggedness
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and EOSS
Excellent hard commutation ruggedness
