Infineon N-Channel MOSFET, 273 A, 100 V, 7-Pin D2PAK IPB017N10N5ATMA1
- RS Stock No.:
- 242-5817P
- Mfr. Part No.:
- IPB017N10N5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£45.30
(exc. VAT)
£54.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 1,788 unit(s) shipping from 13 October 2025
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Units | Per unit |
|---|---|
| 10 - 24 | £4.53 |
| 25 - 49 | £4.35 |
| 50 - 99 | £4.15 |
| 100 + | £3.85 |
*price indicative
- RS Stock No.:
- 242-5817P
- Mfr. Part No.:
- IPB017N10N5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 273 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 273 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Number of Elements per Chip 1 | ||
The Infineon MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation
Highest system efficiency
Reduced switching and conduction losses
Ideal for high switching frequency
Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation
Highest system efficiency
Reduced switching and conduction losses
