Infineon N-Channel MOSFET, 273 A, 100 V, 7-Pin D2PAK IPB017N10N5ATMA1
- RS Stock No.:
- 242-5816
- Mfr. Part No.:
- IPB017N10N5ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£2,180.00
(exc. VAT)
£2,620.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £2.18 | £2,180.00 |
*price indicative
- RS Stock No.:
- 242-5816
- Mfr. Part No.:
- IPB017N10N5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 273 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 273 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Number of Elements per Chip 1 | ||
The Infineon MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation
Highest system efficiency
Reduced switching and conduction losses
Ideal for high switching frequency
Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation
Highest system efficiency
Reduced switching and conduction losses
