Infineon HEXFET N-Channel MOSFET, 192 A, 100 V, 3-Pin D2PAK IRF100S201

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Subtotal 20 units (supplied on a continuous strip)*

£49.30

(exc. VAT)

£59.16

(inc. VAT)

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20 - 48£2.465
50 - 98£2.295
100 - 198£2.125
200 +£1.99

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Packaging Options:
RS Stock No.:
242-0991P
Mfr. Part No.:
IRF100S201
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

192 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Number of Elements per Chip

1

The Infineon single N-channel power MOSFET have 192 A maximum drain current. The operating temperature of power MOSFET is -55 °C to 175 °C. It is ideal for low frequency applications requiring performance and ruggedness.

Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount package
High-current rating