The Infineon OptiMOS™ 5 N-channel MOSFET has 80 V drain source voltage (VDS) & 73 A drain current (ID). It offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. regulator, etc. It is especially designed for synchronous rectification in telecom and server power supplies. In addition, it can also be utilized in other industrial applications such as solar, low voltage drives and adapters.

Ideal for high frequency switching and sync. rec.
Optimized technology for DC/DCconverters
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
100% avalanche tested
N-channel, normal level
Qualified according to JEDEC1) for target applications
Pb-free lead plating
RoHS compliant
Halogen-free according to IEC61249-2-21
Higher solder joint reliability with enlarged source interconnection