onsemi N-Channel MOSFET, 66 A, 650 V TO-247 NTHL045N065SC1
- RS Stock No.:
- 241-0743
- Mfr. Part No.:
- NTHL045N065SC1
- Brand:
- onsemi
Subtotal (1 tube of 450 units)*
£2,711.70
(exc. VAT)
£3,253.95
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 28 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 450 + | £6.026 | £2,711.70 |
*price indicative
- RS Stock No.:
- 241-0743
- Mfr. Part No.:
- NTHL045N065SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 66 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 66 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L
The ON Semiconductor 650 V, 42 mΩ N-Channel silicon carbide MOSFET. Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
High Junction Temperature
High Speed Switching and Low Capacitance
Max RDS(on) = 50 mΩ at Vgs = 18V, Id = 66A
High Speed Switching and Low Capacitance
Max RDS(on) = 50 mΩ at Vgs = 18V, Id = 66A