Infineon N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN 3 x 3 IQE008N03LM5ATMA1
- RS Stock No.:
- 240-6627P
- Mfr. Part No.:
- IQE008N03LM5ATMA1
- Brand:
- Infineon
Subtotal 2 units (supplied on a continuous strip)*
£3.34
(exc. VAT)
£4.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 500 unit(s) shipping from 06 October 2025
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Units | Per unit |
|---|---|
| 2 + | £1.67 |
*price indicative
- RS Stock No.:
- 240-6627P
- Mfr. Part No.:
- IQE008N03LM5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 253 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PQFN 3 x 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 253 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PQFN 3 x 3 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Number of Elements per Chip 1 | ||
The Infineon OptiMOSTM 5 30V PQFN 3.3x3.3 Source-Down features 30 V and low RDS(on) of 0.85 mOhm. It offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level.
Improved PCB losses
Enabling highest power density and performance
Enabling highest power density and performance
