Microchip TN5325 Silicon N-Channel MOSFET, 150 mA, 250 V, 3-Pin TO-92 TN5325K1-G
- RS Stock No.:
- 239-5618P
- Mfr. Part No.:
- TN5325K1-G
- Brand:
- Microchip
Bulk discount available
Subtotal 50 units (supplied in a tray)*
£20.10
(exc. VAT)
£24.10
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 75 | £0.402 |
| 100 - 225 | £0.376 |
| 250 - 975 | £0.369 |
| 1000 + | £0.362 |
*price indicative
- RS Stock No.:
- 239-5618P
- Mfr. Part No.:
- TN5325K1-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 150 mA | |
| Maximum Drain Source Voltage | 250 V | |
| Series | TN5325 | |
| Package Type | TO-92 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 150 mA | ||
Maximum Drain Source Voltage 250 V | ||
Series TN5325 | ||
Package Type TO-92 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Microchip TN5325 series of low-threshold, enhancement-mode (normally-off) transistor utilize a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Low threshold of maximum 2V
High input impedance and high gain
Rise Time of 15 ns
Turn-off Delay Time of 25 ns
Fall Time of 25 ns
High input impedance and high gain
Rise Time of 15 ns
Turn-off Delay Time of 25 ns
Fall Time of 25 ns
