Microchip VP0106 P-Channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 VP0106N3-G
- RS Stock No.:
- 236-8962P
- Mfr. Part No.:
- VP0106N3-G
- Brand:
- Microchip
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Subtotal 50 units (supplied in a bag)*
£36.35
(exc. VAT)
£43.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 820 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 50 - 90 | £0.727 |
| 100 - 240 | £0.659 |
| 250 - 490 | £0.647 |
| 500 + | £0.634 |
*price indicative
- RS Stock No.:
- 236-8962P
- Mfr. Part No.:
- VP0106N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 250 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Series | VP0106 | |
| Package Type | TO-92 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type P | ||
Maximum Continuous Drain Current 250 mA | ||
Maximum Drain Source Voltage 60 V | ||
Series VP0106 | ||
Package Type TO-92 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 1 | ||
The Microchip enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. The vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain