Toshiba Silicon P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SSM3J338R,LF(T
- RS Stock No.:
- 236-3569P
- Mfr. Part No.:
- SSM3J338R,LF(T
- Brand:
- Toshiba
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£15.80
(exc. VAT)
£19.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,400 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 200 | £0.158 |
| 250 - 450 | £0.155 |
| 500 - 950 | £0.151 |
| 1000 + | £0.142 |
*price indicative
- RS Stock No.:
- 236-3569P
- Mfr. Part No.:
- SSM3J338R,LF(T
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 12 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.63e+007 Ω | |
| Maximum Gate Threshold Voltage | 1V | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type P | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.63e+007 Ω | ||
Maximum Gate Threshold Voltage 1V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Toshiba field effect transistor made up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.
Storage temperature range −55 to 150 °C