Infineon N-Channel MOSFET, 230 A, 100 V, 8-Pin SuperSO8 5 x 6 ISC022N10NM6ATMA1
- RS Stock No.:
- 235-4862
- Mfr. Part No.:
- ISC022N10NM6ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£6,640.00
(exc. VAT)
£7,970.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 5,000 unit(s) ready to ship
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Units | Per unit | Per Reel* |
---|---|---|
5000 + | £1.328 | £6,640.00 |
*price indicative
- RS Stock No.:
- 235-4862
- Mfr. Part No.:
- ISC022N10NM6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 230 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | SuperSO8 5 x 6 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 230 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SuperSO8 5 x 6 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Number of Elements per Chip 1 | ||
OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package
ISC022N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete power MOSFETs. Compared to alternative products, Infineons leading thin wafer technology is enabling significant performance benefits.
Infineons OptiMOS™ 6 industrial power MOSFET 100 V is designed for high switching frequency application such as telecom and server power supply, but also the ideal choice for other applications such as solar, power tools and drones.
In the SuperSO8 package it achieves ∼20% improvements in on-state resistance (RDS(on)) and 30% better figure of merits (FOM - RDS(on) x Qg and Qgd) compared to the previous technology OptiMOS™ 5. This enables designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.
Infineons OptiMOS™ 6 industrial power MOSFET 100 V is designed for high switching frequency application such as telecom and server power supply, but also the ideal choice for other applications such as solar, power tools and drones.
In the SuperSO8 package it achieves ∼20% improvements in on-state resistance (RDS(on)) and 30% better figure of merits (FOM - RDS(on) x Qg and Qgd) compared to the previous technology OptiMOS™ 5. This enables designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.
Summary of Features
Compared to OptiMOS™ 5, the new technology achieves:
•∼20% lower RDS(on)
•30% improved FOMg and 40% better FOMgd
•Lower and softer reverse recovery charge (Qrr)
•Ideal for high switching frequency
•MSL 1 classified according to J-STD-020
•175 °C junction temperature rating
•High avalanche energy rating
•Pb-free lead plating
•RoHS compliant
•∼20% lower RDS(on)
•30% improved FOMg and 40% better FOMgd
•Lower and softer reverse recovery charge (Qrr)
•Ideal for high switching frequency
•MSL 1 classified according to J-STD-020
•175 °C junction temperature rating
•High avalanche energy rating
•Pb-free lead plating
•RoHS compliant
Benefits
•Low conduction losses
•Low switching losses
•Fast turn on and off
•Less paralleling required
•Robust reliable performance
•Environmentally friendly
•Less paralleling required
•Low switching losses
•Fast turn on and off
•Less paralleling required
•Robust reliable performance
•Environmentally friendly
•Less paralleling required
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