Infineon F4 Quad SiC N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2B F445MR12W1M1B76BPSA1
- RS Stock No.:
- 234-8968P
- Mfr. Part No.:
- F445MR12W1M1B76BPSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 2 units (supplied in a tray)*
£200.52
(exc. VAT)
£240.62
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 06 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
2 - 4 | £100.26 |
5 + | £90.24 |
*price indicative
- RS Stock No.:
- 234-8968P
- Mfr. Part No.:
- F445MR12W1M1B76BPSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 25 A | |
Maximum Drain Source Voltage | 1200 V | |
Series | F4 | |
Package Type | AG-EASY2B | |
Mounting Type | Screw Mount | |
Maximum Drain Source Resistance | 0.045 Ω | |
Maximum Gate Threshold Voltage | 5.55V | |
Transistor Material | SiC | |
Number of Elements per Chip | 4 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 25 A | ||
Maximum Drain Source Voltage 1200 V | ||
Series F4 | ||
Package Type AG-EASY2B | ||
Mounting Type Screw Mount | ||
Maximum Drain Source Resistance 0.045 Ω | ||
Maximum Gate Threshold Voltage 5.55V | ||
Transistor Material SiC | ||
Number of Elements per Chip 4 | ||
The Infineon IGBT module has a 4 N-Channel (Half Bridge) FET Type works with 1200V Drain to Source Voltage and 75A continuous drain current.
Chassis mount
-40°C to 150°C operating temperature
-40°C to 150°C operating temperature