STMicroelectronics STHU47 N-Channel MOSFET, 36 A, 600 V, 7-Pin HU3PAK STHU47N60DM6AG
- RS Stock No.:
- 234-8901P
- Mfr. Part No.:
- STHU47N60DM6AG
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£56.50
(exc. VAT)
£67.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 600 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
10 - 99 | £5.65 |
100 - 249 | £5.53 |
250 - 499 | £5.43 |
500 + | £5.33 |
*price indicative
- RS Stock No.:
- 234-8901P
- Mfr. Part No.:
- STHU47N60DM6AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 36 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | HU3PAK | |
Series | STHU47 | |
Mounting Type | Surface Mount | |
Pin Count | 7 | |
Maximum Gate Threshold Voltage | 4.75V | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 36 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type HU3PAK | ||
Series STHU47 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Gate Threshold Voltage 4.75V | ||
The STMicroelectronics high-voltage N-channel power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
AEC-Q101 qualified
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested