onsemi SiC N-Channel MOSFET, 68 A, 1200 V, 4-Pin TO-247-4L NTH4L022N120M3S

View all MOSFETs
Bulk discount available

Subtotal 10 units (supplied in a tube)*

£97.60

(exc. VAT)

£117.10

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 283 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
10 +£9.76

*price indicative

Packaging Options:
RS Stock No.:
233-6854P
Mfr. Part No.:
NTH4L022N120M3S
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4L

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.03 Ω

Maximum Gate Threshold Voltage

4.4V

Transistor Material

SiC

Number of Elements per Chip

1

Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L


The ON Semiconductor NTH4L022N120M3S is SiC power, single N-Channel MOSFET. It is available in a TO247-4L package. With Drain to Source voltage of 1200 V and continuous drain current of 68 A, the NTH4L022N120M3S is used in applications like Solar Inverters, Electric Vehicle Charging Stations, UPS (Uninterruptible Power Supplies), Energy Storage Systems, SMPS (Switch Mode Power Supplies).

The typical RDS(on) for this device is 22 mꭥ with VGS of 18 V
The device offers low switching losses
It is 100% avalanche tested