Infineon IPTG Type N-Channel MOSFET, 408 A, 80 V Enhancement, 8-Pin HSOG

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Subtotal 10 units (supplied on a continuous strip)*

£37.70

(exc. VAT)

£45.20

(inc. VAT)

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Units
Per unit
10 - 18£3.77
20 - 48£3.56
50 - 98£3.31
100 +£3.06

*price indicative

Packaging Options:
RS Stock No.:
233-4385P
Mfr. Part No.:
IPTG011N08NM5ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

408A

Maximum Drain Source Voltage Vds

80V

Package Type

HSOG

Series

IPTG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

178nC

Maximum Power Dissipation Pd

375W

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.4mm

Length

10.1mm

Automotive Standard

No

The Infineon OptiMOS power MOSFET IPTG011N08NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 80 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board. This result in 2x higher thermal cycling on board

High efficiency and lower EMI

High performance capability