Infineon OptiMOS™ 5 N-Channel MOSFET, 408 A, 80 V, 8-Pin PG HSOG-8 (TOLG) IPTG011N08NM5ATMA1
- RS Stock No.:
- 233-4385P
- Mfr. Part No.:
- IPTG011N08NM5ATMA1
- Brand:
- Infineon
Subtotal 2 units (supplied on a continuous strip)*
£4.44
(exc. VAT)
£5.32
(inc. VAT)
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Temporarily out of stock
- 1,782 unit(s) shipping from 26 March 2026
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Units | Per unit |
|---|---|
| 2 + | £2.22 |
*price indicative
- RS Stock No.:
- 233-4385P
- Mfr. Part No.:
- IPTG011N08NM5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 408 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | PG HSOG-8 (TOLG) | |
| Series | OptiMOS™ 5 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.0011 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.3V | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 408 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PG HSOG-8 (TOLG) | ||
Series OptiMOS™ 5 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.0011 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.3V | ||
Number of Elements per Chip 1 | ||
The Infineon OptiMOS power MOSFET IPTG011N08NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 80 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board. This result in 2x higher thermal cycling on board
High efficiency and lower EMI
High performance capability
High performance capability
