Infineon OptiMOS™ 5 N-Channel MOSFET, 408 A, 80 V, 8-Pin PG HSOG-8 (TOLG) IPTG011N08NM5ATMA1

Currently unavailable
Sorry, we don't know when this will be back in stock.
Packaging Options:
RS Stock No.:
233-4385P
Mfr. Part No.:
IPTG011N08NM5ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

408 A

Maximum Drain Source Voltage

80 V

Package Type

PG HSOG-8 (TOLG)

Series

OptiMOS™ 5

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0011 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.3V

Number of Elements per Chip

1

The Infineon OptiMOS power MOSFET IPTG011N08NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 80 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board. This result in 2x higher thermal cycling on board

High efficiency and lower EMI
High performance capability