Infineon CoolSiC SiC N-Channel MOSFET, 34 A, 1200 V, 3-Pin TO-247 AIMW120R080M1XKSA1
- RS Stock No.:
- 233-3491P
- Mfr. Part No.:
- AIMW120R080M1XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 5 units (supplied in a tube)*
£55.15
(exc. VAT)
£66.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 52 unit(s) shipping from 06 October 2025
- Plus 999,999,947 unit(s) shipping from 13 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 5 - 9 | £11.03 |
| 10 - 24 | £10.80 |
| 25 - 49 | £10.10 |
| 50 + | £9.40 |
*price indicative
- RS Stock No.:
- 233-3491P
- Mfr. Part No.:
- AIMW120R080M1XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 34 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Series | CoolSiC | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.08 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 34 A | ||
Maximum Drain Source Voltage 1200 V | ||
Series CoolSiC | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.08 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The Infineon CoolSiC MOSFETs for Automotive family has been developed for current and future on board charger and DC-DC applications in hybrid and electric vehicles. It has 33 A drain current.
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
Enabling higher frequency
Increased power density
Cooling effort reduction
