Infineon OptiMOS™ 5 N-Channel MOSFET, 58 A, 100 V, 8-Pin PQFN 3 x 3 ISZ0804NLSATMA1

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Subtotal 50 units (supplied on a continuous strip)*

£56.30

(exc. VAT)

£67.55

(inc. VAT)

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50 - 120£1.126
125 - 245£1.048
250 - 495£0.976
500 +£0.90

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Packaging Options:
RS Stock No.:
232-6778P
Mfr. Part No.:
ISZ0804NLSATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

58 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN 3 x 3

Series

OptiMOS™ 5

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0115 O, 0.0155 O

Maximum Gate Threshold Voltage

2.3V

Transistor Material

Si

Number of Elements per Chip

1

The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.

Logic level availability
Excellent thermal behaviour
100% avalanche tested

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