onsemi SUPERFET III N-Channel MOSFET, 62 A, 650 V, 4-Pin TO-247-4 NTH4LN040N65S3H
- RS Stock No.:
- 230-9085P
- Mfr. Part No.:
- NTH4LN040N65S3H
- Brand:
- onsemi
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£77.70
(exc. VAT)
£93.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 430 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
| Units | Per unit | 
|---|---|
| 10 - 99 | £7.77 | 
| 100 + | £6.73 | 
*price indicative
- RS Stock No.:
- 230-9085P
- Mfr. Part No.:
- NTH4LN040N65S3H
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
| Select all | Attribute | Value | 
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 62 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | SUPERFET III | |
| Package Type | TO-247-4 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 0.04 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Select all | ||
|---|---|---|
| Brand onsemi | ||
| Channel Type N | ||
| Maximum Continuous Drain Current 62 A | ||
| Maximum Drain Source Voltage 650 V | ||
| Series SUPERFET III | ||
| Package Type TO-247-4 | ||
| Mounting Type Through Hole | ||
| Pin Count 4 | ||
| Maximum Drain Source Resistance 0.04 Ω | ||
| Channel Mode Enhancement | ||
| Maximum Gate Threshold Voltage 4V | ||
| Number of Elements per Chip 1 | ||
| Transistor Material Si | ||
The ON Semiconductor series SUPERFET III MOSFET is new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET FAST series helps minimize various power systems and improve system efficiency.
100% Avalanche Tested
RoHS Compliant
Typ. RDS(on) = 32 mΩ
Internal Gate Resistance: 0.7 Ω
Ultra Low Gate Charge (Typ. Qg = 132 nC)
700 V @ TJ = 150 oC
RoHS Compliant
Typ. RDS(on) = 32 mΩ
Internal Gate Resistance: 0.7 Ω
Ultra Low Gate Charge (Typ. Qg = 132 nC)
700 V @ TJ = 150 oC
