onsemi N-Channel MOSFET, 175 A, 150 V, 8-Pin DFNW8 NTMTS4D3N15MC
- RS Stock No.:
- 229-6484
- Mfr. Part No.:
- NTMTS4D3N15MC
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 229-6484
- Mfr. Part No.:
- NTMTS4D3N15MC
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 175 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | DFNW8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.005 Ω | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 175 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type DFNW8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.005 Ω | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
The ON Semiconductor N-Channel MOSFET is produced using advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.
Minimize conduction losses
High peak current and low parasitic inductance
Offers a wider design margin for thermally challenged applications
Reduces switching spike
High peak current and low parasitic inductance
Offers a wider design margin for thermally challenged applications
Reduces switching spike