onsemi SiC Power SiC N-Channel MOSFET, 46 A, 650 V, 4-Pin TO-247-4 NTH4L060N090SC1
- RS Stock No.:
- 229-6462
- Mfr. Part No.:
- NTH4L060N090SC1
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 229-6462
- Mfr. Part No.:
- NTH4L060N090SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 46 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247-4 | |
| Series | SiC Power | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 0.084 Ω | |
| Maximum Gate Threshold Voltage | 4.3V | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 46 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247-4 | ||
Series SiC Power | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 0.084 Ω | ||
Maximum Gate Threshold Voltage 4.3V | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size