onsemi SiC Power SiC N-Channel MOSFET, 55 A, 650 V, 4-Pin TO-247-4 NTH4L045N065SC1

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Packaging Options:
RS Stock No.:
229-6460
Mfr. Part No.:
NTH4L045N065SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247-4

Series

SiC Power

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.05 Ω

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC

The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size