onsemi SUPERFET III N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK NTD360N65S3H
- RS Stock No.:
- 229-6453P
- Mfr. Part No.:
- NTD360N65S3H
- Brand:
- onsemi
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£88.80
(exc. VAT)
£106.55
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 14,865 unit(s) shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 95 | £1.776 |
| 100 + | £1.54 |
*price indicative
- RS Stock No.:
- 229-6453P
- Mfr. Part No.:
- NTD360N65S3H
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | SUPERFET III | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.36 Ω | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 650 V | ||
Series SUPERFET III | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.36 Ω | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK
SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency.
Features
• 700 V @ TJ = 150°C
• Ultra Low Gate Charge (Typ. Qg = 17.5 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF)
• Fast switching performance with robust body diode
• 100% Avalanche Tested
• RoHS Compliant
• Typ. RDS(on) = 296 m
• Internal Gate Resistance: 0.9
• Ultra Low Gate Charge (Typ. Qg = 17.5 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF)
• Fast switching performance with robust body diode
• 100% Avalanche Tested
• RoHS Compliant
• Typ. RDS(on) = 296 m
• Internal Gate Resistance: 0.9