Infineon IPP Silicon P-Channel MOSFET, 120 A, 40 V, 3-Pin TO-220 IPP120P04P4L03AKSA2
- RS Stock No.:
- 229-1847P
- Mfr. Part No.:
- IPP120P04P4L03AKSA2
- Brand:
- Infineon
Bulk discount available
Subtotal 25 units (supplied in a tube)*
£65.65
(exc. VAT)
£78.775
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- 105 left, ready to ship
- Final 500 unit(s) shipping from 08 January 2026
Units | Per unit |
|---|---|
| 25 - 45 | £2.626 |
| 50 - 120 | £2.448 |
| 125 - 245 | £2.272 |
| 250 + | £2.094 |
*price indicative
- RS Stock No.:
- 229-1847P
- Mfr. Part No.:
- IPP120P04P4L03AKSA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | TO-220 | |
| Series | IPP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.0034 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 136 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +5 V | |
| Transistor Material | Silicon | |
| Typical Gate Charge @ Vgs | 180 nC | |
| Length | 15.65mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Width | 9.9mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC | |
| Height | 2.54mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type TO-220 | ||
Series IPP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0034 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 136 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +5 V | ||
Transistor Material Silicon | ||
Typical Gate Charge @ Vgs 180 nC | ||
Length 15.65mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 9.9mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC | ||
Height 2.54mm | ||
Infineon Series IPP MOSFET, 120A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IPP120P04P4L03AKSA2
This silicon MOSFET is designed for high performance within various applications. The component features a TO-220 package that enhances its capability for effective thermal dissipation. With a maximum continuous drain current of 120A and a drain-source voltage of 40V, it offers excellent operational flexibility in demanding environments. The MOSFET operates efficiently across a wide temperature range, making it suitable for automotive and industrial applications.
Features & Benefits
• P-channel enhancement mode ensures efficient switching performance
• AEC qualified, meeting rigorous automotive standards
• Maximum operating temperature of +175°C allows for demanding requirement
• MSL1 rating supports high-temperature reflow processes
• AEC qualified, meeting rigorous automotive standards
• Maximum operating temperature of +175°C allows for demanding requirement
• MSL1 rating supports high-temperature reflow processes
Applications
• Used in automotive control systems for efficient power management
• Effective for electric motor drive in robotics
• Incorporated into power supply circuits in industrial machinery
• Suitable for consumer electronics where compact size is essential
• Effective for electric motor drive in robotics
• Incorporated into power supply circuits in industrial machinery
• Suitable for consumer electronics where compact size is essential
What is the significance of the maximum continuous drain current rating?
The maximum continuous drain current rating indicates the highest amount of current the device can handle under normal operating conditions, which is essential for ensuring reliability in applications demanding high current capacity.
How does the low Rds(on) contribute to power efficiency?
A low Rds(on) reduces power losses during operation, allowing devices to run cooler and enhancing overall system energy efficiency, which is particularly beneficial in battery-operated designs.
What safety features does this component offer for harsh environments?
This device is 100% avalanche tested, ensuring it can withstand transient conditions without failure, which is crucial for protecting circuits in unpredictable environments such as automotive and industrial applications.
What performance characteristics should one consider when integrating this component into existing systems?
Key characteristics like gate threshold voltage, maximum gate-source voltage, and thermal resistance should be evaluated to ensure compatibility with existing circuit designs and to optimise performance.
How does the operating temperature range enhance its usability in different applications?
With an operating temperature range from -55°C to +175°C, this MOSFET is versatile enough for use across a broad spectrum of applications, from extreme cold environments to high-temperature operational settings.
