Infineon OptiMOS™ -T2 Dual Silicon N-Channel MOSFET, 20 A, 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S409ATMA1
- RS Stock No.:
- 229-1841P
- Mfr. Part No.:
- IPG20N04S409ATMA1
- Brand:
- Infineon
Save 14% when you buy 500 units
Subtotal 50 units (supplied on a continuous strip)*
£45.35
(exc. VAT)
£54.40
(inc. VAT)
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In Stock
- 15,000 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 50 - 90 | £0.907 |
| 100 - 240 | £0.869 |
| 250 - 490 | £0.831 |
| 500 + | £0.774 |
*price indicative
- RS Stock No.:
- 229-1841P
- Mfr. Part No.:
- IPG20N04S409ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | OptiMOS™ -T2 | |
| Package Type | SuperSO8 5 x 6 Dual | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.0086 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 40 V | ||
Series OptiMOS™ -T2 | ||
Package Type SuperSO8 5 x 6 Dual | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.0086 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 2 | ||
The Infineon dual n channel normal level MOSFET has same thermal and electrical performance as a DPAK with the same die size. It's exposed pad provides excellent thermal transfer. It is two n channel in one package with 2 isolated lead frames.
It is RoHS compliant and AEC Q101 qualified
It has 175°C operating temperature
It has 175°C operating temperature
