Infineon HEXFET Silicon N-Channel MOSFET, 110 A, 55 V, 3-Pin D2PAK AUIRF3205ZSTRL

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Subtotal 25 units (supplied on a continuous strip)*

£36.25

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£43.50

(inc. VAT)

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25 - 45£1.45
50 - 120£1.37
125 - 245£1.272
250 +£1.174

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Packaging Options:
RS Stock No.:
229-1729P
Mfr. Part No.:
AUIRF3205ZSTRL
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0065 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications.

It is RoHS compliant and AEC Q101 qualified