Infineon HEXFET Silicon N-Channel MOSFET, 110 A, 55 V, 3-Pin D2PAK AUIRF3205ZSTRL
- RS Stock No.:
- 229-1729P
- Mfr. Part No.:
- AUIRF3205ZSTRL
- Brand:
- Infineon
Save 19% when you buy 250 units
Subtotal 25 units (supplied on a continuous strip)*
£36.25
(exc. VAT)
£43.50
(inc. VAT)
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- Shipping from 22 January 2026
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Units | Per unit |
---|---|
25 - 45 | £1.45 |
50 - 120 | £1.37 |
125 - 245 | £1.272 |
250 + | £1.174 |
*price indicative
- RS Stock No.:
- 229-1729P
- Mfr. Part No.:
- AUIRF3205ZSTRL
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 110 A | |
Maximum Drain Source Voltage | 55 V | |
Series | HEXFET | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.0065 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Transistor Material | Silicon | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 110 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.0065 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications.
It is RoHS compliant and AEC Q101 qualified