Infineon F3L11MR12W2M1 N-Channel MOSFET Module, 100 A, 1200 V AG-EASY2B F3L11MR12W2M1B74BOMA1
- RS Stock No.:
- 228-6521
- Mfr. Part No.:
- F3L11MR12W2M1B74BOMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£130.36
(exc. VAT)
£156.43
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 1 | £130.36 |
| 2 - 4 | £123.84 |
| 5 + | £118.63 |
*price indicative
- RS Stock No.:
- 228-6521
- Mfr. Part No.:
- F3L11MR12W2M1B74BOMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | AG-EASY2B | |
| Series | F3L11MR12W2M1 | |
| Mounting Type | Screw Mount | |
| Maximum Gate Threshold Voltage | 5.15V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type AG-EASY2B | ||
Series F3L11MR12W2M1 | ||
Mounting Type Screw Mount | ||
Maximum Gate Threshold Voltage 5.15V | ||
The Infineon F3L11MR12W2M1 is the silicon carbide MOSFET modules. This module have 75 kW power per module in energy storage systems and short and clean commutation loops. The module have High degree of freedom for the inverter design.
Increased DC link voltage
High current density
Lows witching losses
High current density
Lows witching losses