Vishay TrenchFET Dual N-Channel MOSFET, 335 A, 25 V, 8-Pin PowerPAK SO-8 SIRA20BDP-T1-GE3

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Subtotal 50 units (supplied on a continuous strip)*

£77.50

(exc. VAT)

£93.00

(inc. VAT)

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Per unit
50 - 120£1.55
125 - 245£1.206
250 - 495£1.068
500 +£0.98

*price indicative

Packaging Options:
RS Stock No.:
228-2916P
Mfr. Part No.:
SIRA20BDP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

335 A

Maximum Drain Source Voltage

25 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.00058 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Number of Elements per Chip

2

Transistor Material

Si

The Vishay TrenchFET N-channel is 25 V MOSFET.

100 % Rg and UIS tested