Vishay TrenchFET Dual N-Channel MOSFET, 51.4 A, 100 V, 8-Pin PowerPAK SO-8 SiR876BDP-T1-RE3

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Subtotal 100 units (supplied on a continuous strip)*

£85.00

(exc. VAT)

£102.00

(inc. VAT)

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Units
Per unit
100 - 240£0.85
250 - 490£0.769
500 - 990£0.723
1000 +£0.677

*price indicative

Packaging Options:
RS Stock No.:
228-2912P
Mfr. Part No.:
SiR876BDP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

51.4 A

Maximum Drain Source Voltage

100 V

Package Type

PowerPAK SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0108 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

2

Transistor Material

Si

The Vishay TrenchFET N-channel is 100 V MOSFET.

100 % Rg and UIS tested