Vishay TrenchFET Dual N-Channel MOSFET, 126 A, 100 V, 8-Pin PowerPAK SO-8 SiR510DP-T1-RE3

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Subtotal 50 units (supplied on a continuous strip)*

£93.10

(exc. VAT)

£111.70

(inc. VAT)

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Units
Per unit
50 - 120£1.862
125 - 245£1.656
250 - 495£1.512
500 +£1.304

*price indicative

Packaging Options:
RS Stock No.:
228-2904P
Mfr. Part No.:
SiR510DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

126 A

Maximum Drain Source Voltage

100 V

Package Type

PowerPAK SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0036 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

2

The Vishay TrenchFET N-channel is 100 V MOSFET.

100 % Rg and UIS tested