Vishay E Series Dual N-Channel MOSFET, 21 A, 850 V, 3-Pin TO-247AC SIHG24N80AE-GE3
- RS Stock No.:
- 228-2870P
- Mfr. Part No.:
- SIHG24N80AE-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 20 units (supplied in a tube)*
£69.50
(exc. VAT)
£83.40
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 478 unit(s), ready to ship
Units | Per unit |
|---|---|
| 20 - 48 | £3.475 |
| 50 - 98 | £3.29 |
| 100 - 198 | £3.11 |
| 200 + | £2.375 |
*price indicative
- RS Stock No.:
- 228-2870P
- Mfr. Part No.:
- SIHG24N80AE-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 A | |
| Maximum Drain Source Voltage | 850 V | |
| Package Type | TO-247AC | |
| Series | E Series | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.184 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 A | ||
Maximum Drain Source Voltage 850 V | ||
Package Type TO-247AC | ||
Series E Series | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.184 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Low effective capacitance (Co(er))