Vishay E Series N-Channel MOSFET, 8 A, 850 V, 3-Pin DPAK SIHD11N80AE-T1-GE3
- RS Stock No.:
- 228-2849P
- Mfr. Part No.:
- SIHD11N80AE-T1-GE3
- Brand:
- Vishay
Subtotal 5 units (supplied on a continuous strip)*
£7.48
(exc. VAT)
£8.975
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 1,995 unit(s) shipping from 10 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 5 + | £1.496 |
*price indicative
- RS Stock No.:
- 228-2849P
- Mfr. Part No.:
- SIHD11N80AE-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 850 V | |
| Series | E Series | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.45 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 850 V | ||
Series E Series | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.45 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Low effective capacitance (Co(er))