Vishay E Series Dual N-Channel MOSFET, 21 A, 800 V, 3-Pin D2PAK SIHB24N80AE-GE3
- RS Stock No.:
- 228-2847P
- Mfr. Part No.:
- SIHB24N80AE-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 20 units (supplied in a tube)*
£43.40
(exc. VAT)
£52.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 944 unit(s) shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 - 48 | £2.17 |
| 50 - 98 | £2.045 |
| 100 - 198 | £1.925 |
| 200 + | £1.785 |
*price indicative
- RS Stock No.:
- 228-2847P
- Mfr. Part No.:
- SIHB24N80AE-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 A | |
| Maximum Drain Source Voltage | 800 V | |
| Series | E Series | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.184 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 A | ||
Maximum Drain Source Voltage 800 V | ||
Series E Series | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.184 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Low effective capacitance (Co(er))