Vishay E Series Dual N-Channel MOSFET, 25 A, 650 V, 3-Pin D2PAK SIHB120N60E-T1-GE3

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Subtotal 20 units (supplied on a continuous strip)*

£99.30

(exc. VAT)

£119.16

(inc. VAT)

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20 - 98£4.965
100 - 198£4.76
200 - 498£4.505
500 +£4.245

*price indicative

Packaging Options:
RS Stock No.:
228-2842P
Mfr. Part No.:
SIHB120N60E-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Series

E Series

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.12 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Transistor Material

Si

Number of Elements per Chip

2

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))