Infineon OptiMOS™ N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin SOT-223 BSS123IXTSA1
- RS Stock No.:
- 225-0557P
- Mfr. Part No.:
- BSS123IXTSA1
- Brand:
- Infineon
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- 3,900 unit(s) ready to ship
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Units | Per unit |
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500 - 900 | £0.06 |
1000 - 2400 | £0.057 |
2500 - 4900 | £0.051 |
5000 + | £0.038 |
*price indicative
- RS Stock No.:
- 225-0557P
- Mfr. Part No.:
- BSS123IXTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 190 mA | |
Maximum Drain Source Voltage | 100 V | |
Series | OptiMOS™ | |
Package Type | SOT-223 | |
Mounting Type | Surface Mount | |
Pin Count | 4 | |
Channel Mode | Depletion | |
Maximum Gate Threshold Voltage | 1.8V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 190 mA | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS™ | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Channel Mode Depletion | ||
Maximum Gate Threshold Voltage 1.8V | ||
Number of Elements per Chip 1 | ||
The Infineon BSS123I is the small signal, small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. This MOSFET have enhancement and depletion-mode options.
PCB-space and cost savings
Gate drive flexibility
Reduced design complexity
Environmentally friendly
High overall efficiency
Gate drive flexibility
Reduced design complexity
Environmentally friendly
High overall efficiency